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SUMMARY:HEPS-BPIX40: the upgrade of the hybrid pixel detector for the High
  Energy Photon Source
DTSTART;VALUE=DATE-TIME:20230906T094000Z
DTEND;VALUE=DATE-TIME:20230906T100000Z
DTSTAMP;VALUE=DATE-TIME:20260612T054437Z
UID:indico-contribution-2820@indico.tlabs.ac.za
DESCRIPTION:Speakers: Wei Wei (IHEP\, CAS)\nHEPS-BPIX40 is a new hybrid pi
 xel detector specifically designed for the High Energy Photon Source\, whi
 ch is currently under construction in Beijing\, China. It is a full upgrad
 e from both the chip and detector module of its former version\, BPIX20. T
 he pixel chip comprises a matrix of 128 x 96 pixels\, with each pixel meas
 uring 140 μm x 140 μm. The pixel circuit operates in the single photon c
 ounting mode with dual thresholds\, featuring programmable gains for diffe
 rent beam energies and deadtimeless readout. The counting depth for each t
 hreshold is designed to be 14 bits\, and the frame rate was tested to be 2
  kHz when operating in continuous readout mode. The chip was designed usin
 g CMOS 130 nm technology and fabricated by 12-inch wafers\, with a yield o
 f 97% tested by a dedicated probe card. Assembled by 2 x 6 chips\, a detec
 tor module covers an area of 3.7 cm x 8.1 cm. The periphery circuit of the
  chip was optimized along its height\, allowing the assembly gap between m
 ultiple modules to be as small as 3 mm\, even with conventional wire-bondi
 ng processes. All chips of the module were bump bonded by the CuSn process
  with high yield. The noise after packaging was tested to be about 112e-\,
  and the equalized non-uniformity was found to be 123e-. The full system w
 ill consist of 40 modules to implement a detector with approximately six m
 illion pixels. This paper presents a detailed design and test results of t
 he detector.\n\nhttps://indico.tlabs.ac.za/event/112/contributions/2820/
LOCATION: Meeting Room 2.64 - 2.66
URL:https://indico.tlabs.ac.za/event/112/contributions/2820/
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