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SUMMARY:Significant performance recovery of SiPMs’ irradiation damage wi
 th in-situ current annealing
DTSTART;VALUE=DATE-TIME:20230907T150000Z
DTEND;VALUE=DATE-TIME:20230907T152000Z
DTSTAMP;VALUE=DATE-TIME:20260811T114951Z
UID:indico-contribution-2994@indico.tlabs.ac.za
DESCRIPTION:Speakers: Xilei Sun (IHEP)\nWe have developed a technique that
  utilizes the forward current to heat and anneal SiPMs to mitigate the eff
 ects of radiation damage in high-radiation environments. We conducted an e
 xperimental study on the radiation damage and recovery of SiPMs. SiPMs fro
 m three different manufacturers (SengL\, Hamamatsu\, and Beijing Normal Un
 iversity) were examined. Unlike the conventional method of using low curre
 nt for prolonged periods\, our approach yields a substantial annealing eff
 ect in a shorter duration of tens to hundreds of seconds using higher curr
 ent (about 0.8 A). A magnitude reduction of 1-2 orders in the dark current
  of all SiPMs was observed post-annealing. When the irradiated SiPMs were 
 subjected to temperature sensitivity testing from -30°C to 20°C\, it was
  noticed that in-situ current annealing corrected the decreased sensitivit
 y of SiPMs to temperature and enhanced the energy resolution of SiPMs\, wh
 ich restored the peak position of SiPMs to nearly 80% of their pre-irradia
 tion levels. In conclusion\, our outcomes demonstrate considerable enhance
 ment of SiPM properties following in-situ current annealing. Therefore\, o
 ur short-duration but higher-ampere in-situ annealing provides a practical
  and effective method to improve the radiation resistance of SiPMs in spac
 e and collider experiments.\n\nhttps://indico.tlabs.ac.za/event/112/contri
 butions/2994/
LOCATION: Auditorium 2
URL:https://indico.tlabs.ac.za/event/112/contributions/2994/
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