Description
Chair:
Dr
Manfred Deicher
(Experimentalphysik, Universität des Saarlandes, Saarbrücken)
05/12/2013, 11:10
Oral
Progress in semiconductor technology requires a thorough understanding and control of defects responsible for the properties of semiconducting materials, both of intrinsic defects, such as vacancies, self-interstitials, or anti-sites, and of extrinsic defects, such as dopants and impurity atoms. Depending on the material and the structural size used in a device, the electrical and optical...
Mr
Hilary Masenda
(School of Physics, University of the Witwatersrand, Johannesburg, 2050, South Africa)
05/12/2013, 11:45
Oral
III-Nitrides doped with 3d metals have attracted much attention since the theoretical prediction that Mn-doped GaN is a potential dilute magnetic semiconductors with high Curie temperatures (Tc ≥ 300 K), resulting from carrier mediated magnetic interactions due to itinerant holes coupling with localized dopant spins. Several reports have shown these materials to exhibit different forms of...
Prof.
Patrick Regan
(University of Surrey & The National Physical Laboratory, UK)
05/12/2013, 12:10
Oral
Precision measurements of electromagnetic transition rates provide accurate inputs
into nuclear data evaluations and are also used to test and validate predictions of state of the art nuclear structure models. Measurements of transition rates can be used to ascertain or rule out multipolarity assignments for the measured EM decay, thereby providing spins and parity (difference) information...
