Speaker
Description
The goal of the TANGERINE project is to develop the next generation of
monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which
offers a higher logic density and overall lower power consumption compared to
previously used processes. A combination of Technology Computer-Aided De-
sign (TCAD) and Monte Carlo (MC) simulations are used to understand the
physical processes within the sensing element and thus the overall performance
of the pixel detector. The response of the sensors can then be tested in labora-
tory and test beam facilities and compared to our simulation results.
Transient simulations allow for studying the response of the sensor over time,
such as the signal produced after a charged particle passes through the sensor.
The study of these signals is important to understand the magnitude and timing
of the response from the sensors and improve upon them. While TCAD simula-
tions are accurate, the time required to produce a single pulse is large compared
to the here used approach. The combination of MC and TCAD simulations
reduces the simulation time and thus allows for studies that are not possible
with an TCAD alone approach such as Landau fluctuations or secondary parti-
cle production. In this approach, electrostatic fields from TCAD are imported
into the Allpix Squared framework, a simulation framework for semiconductor
radiation detectors, and through the use of the Shockley-Ramo Theorem, the
pulses induced from charges moving through the sensor are calculated.
In this contribution, the advantages of this approach and the resulting pulses
obtained from the MC and TCAD simulations used as validation between the
two methods, preliminary time resolution studies obtained at the DESY-II Test
Beam facility, and a comparison with simulations will be presented.
